Bee Technology DM-004 Device Modeling Teaching Materials Power MOSFET Edition

Manufaturer:	Bee Technology
Model:	DM-004

Product code

111-63915

Price 292.85 USD

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Description

20% off for a limited time only! [Summary]
This is a teaching material for device modeling of power MOSFETs, which play a key role in power electronics.
A power MOSFET consists of a main MOSFET and a body diode.
We explain the key points, precautions, and optimal modeling process for each device.
We hope you will use this to gain an understanding of power MOSFETs.　
【table of contents】
1. About Device Modeling
2. Device modeling of power MOSFET
Power MOSFET
2.1 How to determine the constants L, W, and TOX
2.2 Extraction method of KP
2.3 How to extract VTO
2.4 Extraction method of RD
2.5 How to extract RDS
2.6 Extraction method of CGSO and CGDO
2.7 Extraction method of MJ and PB
2.8 Extraction method of RG
Body Diode
2.9 Extraction method of IS, N, RS, and IKF
2.10 How to extract TT (trj)
2.11 How to write a subcircuit
3. How to evaluate device models
Power MOSFET
3.1 Simulation and evaluation of Vgs-ld characteristics
3.2 Evaluation, analysis and simulation of Rds(on) Resistance
3.3 Simulation and evaluation of gate charge characteristics
3.4 Evaluation and analysis simulation of capacitance characteristics (VdS vs. Cbd)
3.5 td(on) evaluation, analysis and simulation
Body Diode
3.6 Evaluation, analysis and simulation of Vsd vs. ls characteristics
3.7 Evaluation, analysis and simulation of reverse recovery characteristics
4. Weaknesses of the model (gate charge characteristics)
5. Thermal device model
6. Question and Answer Session